SourcePoint Supplier Profile for
Micron
Business Type: semiconductor solutions
Product/Service: Semiconductor Manufacture
Company Website: http://www.micron.com
Address: 8000 S. Federal Way P.O. Box 6, Boise, ID, 83707-0006
Telephone: 208-368-4000
Fax: 208-368-4435
Special information:
Micron is one of the world's largest companies focused on memory, storage, and imaging semiconductor products from DRAM to NAND Flash to CMOS image sensors.
Micron's leading-edge semiconductor products are designed to add differentiated value to the mobile, computing, server, automotive, networking, security, industrial, consumer and medical applications its customers develop.
Product Showcase
1Gb DDR3 SDRAM Component : MT41J128M8BY-15E
DDR3 SDRAM is a high-speed dynamic random-access memory that uses an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O bond pads.
4Gb DDR3 SDRAM Component : MT41J1G4THU-15E
DDR3 SDRAM is a high-speed dynamic random-access memory that uses an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O bond pads.
1Gb DDR3 SDRAM Component : MT41J256M4JP-125
DDR3 SDRAM is a high-speed dynamic random-access memory that uses an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O bond pads.
2Gb DDR3 SDRAM Component : MT41J512M4JE-187E
DDR3 SDRAM is a high-speed dynamic random-access memory that uses an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O bond pads.
1Gb DDR3 SDRAM Component : MT41K256M4JP-187E
Micron's Aspen™ Memory line features reduced voltage specifically designed to reduce power consumption in your application. DDR3 SDRAM is a high-speed dynamic random-access memory that uses an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O bond pads.
16Mb CellularRAM : MT45W1MW16BDGB-701 IT
Micron CellularRAM is a pseudo-static memory ideal for low-power mobile applications. This device includes an industry-standard burst mode Flash interface to increase read/write bandwidth compared with other low-power SRAM or pseudo-SRAM offerings.
16Mb CellularRAM : MT45W1MW16PDGA-70 IT
Micron CellularRAM is a pseudo-static memory ideal for low-power mobile applications. This device includes an industry-standard burst mode Flash interface to increase read/write bandwidth compared with other low-power SRAM or pseudo-SRAM offerings.
32Mb CellularRAM : MT45W2MW16BGB-708 AT
Micron CellularRAM is a pseudo-static memory ideal for low-power mobile applications. This device includes an industry-standard burst mode Flash interface to increase read/write bandwidth compared with other low-power SRAM or pseudo-SRAM offerings.
2GB e-MMC : MTFC2GGQDQ-WT
Micron’s e-MMC embedded memory combines high-quality, low-cost NAND Flash memory with a high-speed MultiMediaCard (MMC) controller in a low-profile BGA package.
2GB eUSB : MTFDCAE002SAF-1B1IT
Micron’s embedded USBs provide USB 2.0-compatible memory storage in a small form factor. These mass storage devices use only SLC NAND Flash, and all densities use two x8 NAND channels to the controller. Coupled with ECC and wear leveling, the embedded USB provides a highly reliable storage solution.
